EPC2619
「EPC2619」熱門搜尋資訊
「EPC2619」文章包含有：「EfficientPowerConversionEPC2619100V3.3mOhmGen...」、「EPC2619」、「EPC2619」、「EPC2619EPC」、「EPC2619–EnhancementModePowerTransistor」、「EPC2619」、「EPC2619」、「GaNFETsandICsDemoBoardsEPCEPC2619」、「【元件】EPC新推出80VGaNFETEPC2619，导通电阻仅4mΩ」
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Efficient Power Conversion EPC2619 100V 3.3mOhm Gen ...
https://www.techinsights.com
The Efficient Power Conversion EPC2619 device includes a single gallium nitride (GaN) power high electron mobility transistor (HEMTs) die ...
EPC2619
https://www.satnow.com
The EPC2619 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 100 V, Voltage - Gate-Source (Vgs) -4 to 6 V, ...
EPC2619
https://www.everythingpe.com
The EPC2619 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for Class-D audio, isolated DC-DC converters ...
EPC2619 EPC
https://www.digikey.tw
EPC2619 ; Vgs (最大值). +6V、-4V ; 輸入電容(Ciss) (最大值) @ Vds. 1180 pF @ 50 V ; FET 特點. - ; 功率耗散(最大值). - ; 工作溫度. -40°C ~ 150°C (TJ).
EPC2619 – Enhancement Mode Power Transistor
https://www.power-mag.com
EPC2619 eGaN® FETs are supplied only in passivated die form with solder bars. Applications. • DC-DC Converters. • Isolated DC-DC Converters. • Sync ...
EPC2619
https://epc-co.com
Benefits · High efficiency. Lower conduction and switching losses · No reverse recovery (QRR) · Ultra-small footprint · Excellent thermal performance.
EPC2619
https://epc-co.com
EPC2619: 100 V、4.2 mΩ增强型功率電晶體. VDS, 100 V RDS(on) (最大值), 4.2 mΩ. ID, 29 A 脉衝ID, 164 A. EPC2619 Enhancement Mode GaN Power Transistor Package Size ...
GaNFETs and ICs DemoBoards EPC EPC2619
https://www.melchionielectroni
100 V, 4.2 mΩ Enhancement Mode GaN Power Transistor EPC2619 is available to buy in increments of 2500. GaNFETs and ICs DemoBoards EPC EPC2619.
【元件】EPC新推出80V GaN FET EPC2619，导通电阻仅4mΩ
https://www.sekorm.com
描述：内部集成两颗100V耐压2.4mR的GaN FET,内置半桥驱动电路,耐压100V,最大导通电流60A,最高开关频率1MHz,半桥拓扑结构,半桥死区时间可编程,具有使能功能。