SC1 SC2 clean：最常使用之晶圓表面清潔步驟為濕式化學法(wet chemistry)

最常使用之晶圓表面清潔步驟為濕式化學法(wet chemistry)

標準清潔液2(standardclean2)為HCl/H2O2/H2O.比例為：1:1:6至1:2:8.清潔溫度為：75~85℃.清潔時間為：10~20分鐘。晶圓濕式蝕刻之簡介.在積體電路(Integrated ...。其他文章還包含有：「Cleans」、「RCAclean」、「RCAClean製程」、「StandardClean2」、「TWI409862B」、「WaferCleaningProcess」、「[問題]RCAcleanSC1SC2流程」、「辛耘知識分享家」

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Cleans

https://www.noeltech.com

RCA Clean (SC1-SC2) · RCA: SC1 chemical Ratio: 40:1:1. DI Water (40 Parts), Hydrogen Peroxide (1 Part), Ammonia Hydroxide (1 Part) · SC2 Chemical ...

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RCA clean

https://en.wikipedia.org

Third step (SC-2): ionic clean · 6 parts of deionized water · 1 part of aqueous HCl (hydrochloric acid, 37% by weight) · 1 part of aqueous H2O2 (hydrogen peroxide, ...

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RCA Clean製程

https://www.gptc.com.tw

半導體晶圓製程中有五大污染物：微粒、金屬不純物、有機污染物、自然生成氧化層及晶圓表面的微粗糙等，常用化學品有SC-1(APM)、SC-2(HPM)、SPM、HF及BHF等，SC-1及SC-2 ...

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Standard Clean 2

https://snfguide.stanford.edu

SC2 is usually used as a follow up step to an SC1 clean. This step in the clean sequence targets metal ion surface contamination and is required before ...

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TWI409862B

https://patents.google.com

本發明係例示如何減少SC1－SC2程序之時間，用於單晶圓模式為從約40分鐘降低至1.5分鐘，且用於整體潔淨循環包括HF、潔淨、沖洗和乾燥等為至少少於3分鐘。回收晶圓( ...

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Wafer Cleaning Process

https://www.modutek.com

SC1 clean process uses the APM solution (ammonia hydroxide-hydrogen peroxide water mixture) of the RCA cleaning method, which removes organic matter and ...

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