Floating gate memory:浮柵金屬氧化物半導體場效應電晶體
浮柵金屬氧化物半導體場效應電晶體
浮柵金屬氧化物半導體場效應電晶體(Floating-gateMOSFET,簡稱浮柵MOSFET或FGMOS)是一種場效應電晶體,其結構類似傳統的金屬氧化物場效應電晶體(MOSFET)。。其他文章還包含有:「Asemi」、「FloatingGate」、「Floating」、「NANDFlashTransistors(suggested#1fortrainingsequel)」、「Recentadvancesinmetalnanoparticle‐basedfloating...」、「THEFLOATINGGATEMEMORYFromConcepttoFlash...」、「Whatisafloatinggatetran...
查看更多 離開網站A semi
https://www.nature.com
This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access ...
Floating Gate
https://www.sciencedirect.com
The floating-gate avalanche-injection transistor (FAMOS) is another nonvolatalle memory element. A floating (not electrically connected) polycrystalline ...
Floating
https://en.wikipedia.org
The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies.
NAND Flash Transistors (suggested #1 for training sequel)
https://www.youtube.com
Recent advances in metal nanoparticle‐based floating ...
https://onlinelibrary.wiley.co
In the case of an n-type floating gate memory, programming is the process that injects electrical charges into floating gate during an applied ...
THE FLOATING GATE MEMORY From Concept to Flash ...
http://sme.ustc.edu.cn
FIRST PAPER ON FLOATING-GATE MEMORY EFFECT ... Charge-trapping memory (CTM): when the thickness of the floating gate approaches zero and the charges are ...
What is a floating gate transistor?
https://www.techtarget.com
浮閘記憶體
https://ejournal.stpi.narl.org
memory, NVM)如此重要的儲存 ... 簡稱為浮閘記憶體(floating-gate memory,. FGM)。 ... 源:D. Kahng and S. M. Sze, A Floating Gate and its.
第一章序論
https://ir.nctu.edu.tw
(Floating gate memory)的論文,從論文中也可以了解,實際上元件要如何的製作、實驗. 要如何的量測,以及哪些是我們在記憶體這領域要討論的項目。