FOM MOSFET:Is the MOSFET figure of merit (FoM) still relevant?

Is the MOSFET figure of merit (FoM) still relevant?

Is the MOSFET figure of merit (FoM) still relevant?

2020年7月1日—ThetraditionalFoMdefinitionoftenactsasagatingfactorforMOSFETselection,fortoday'smotordriveandswitchmodepowersupply(SMPS) ...。其他文章還包含有:「ExploringSiCMOSFETFigureofMerit(FOM)」、「Istoday'sacceptedMOSFETFigureofMeritstillrelevant?」、「MOSFET简介」、「RethinkingthePowerMOSFETFigureofMerit」、「Vishay專家提醒你:要重新思考功率MOSFET的優點!」、「WhatareMOSFETs?」、「了...

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FOM MOSFETfom定義fom品質因數
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Exploring SiC MOSFET Figure of Merit (FOM)
Exploring SiC MOSFET Figure of Merit (FOM)

https://toshiba.semicon-storag

Silicon carbide (SiC) MOSFETs are able to deliver much more impressive switching characteristics than their silicon-based equivalents.

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Is today's accepted MOSFET Figure of Merit still relevant?
Is today's accepted MOSFET Figure of Merit still relevant?

https://efficiencywins.nexperi

As the traditional FOM definition also often acts as a gating factor for MOSFET selection, for today's motor drive and SMPS topologies we need ...

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MOSFET简介
MOSFET简介

https://cn.shindengen.co.jp

因此,在比较MOSFET的性能时,应采用FOM(Figure of Merit)即“性能指数”来进行比较。 FOM包括Ron×Ciss、Ron×Qg、Ron×A等。 总之,要比较“芯片尺寸很小的同时ON电阻也很 ...

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Rethinking the Power MOSFET Figure of Merit
Rethinking the Power MOSFET Figure of Merit

https://eepower.com

This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design platform to another.

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Vishay 專家提醒你:要重新思考功率MOSFET 的優點!
Vishay 專家提醒你:要重新思考功率MOSFET 的優點!

https://www.wpgdadatong.com

MOSFET FOM 最簡單、最廣泛使用的定義是 Rds x Qg 乘積。 每個新的MOSFET 產品線發佈時,都會同時公佈令人印象深刻的至少20% 的FOM 下降幅度。 基於更新型 ...

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What are MOSFETs?
What are MOSFETs?

https://www.shindengen.com

For this reason, a “performance index” called “FOM (Figure of Merit)” when comparing MOSFET performance. FOM types include RDS(ON)×Ciss, RDS(ON)×Qg, RDS(ON) ...

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了解提升功率密度的權衡與技術(Rev. C)
了解提升功率密度的權衡與技術(Rev. C)

https://www.ti.com

各種MOSFET 技術關閉能源損耗。 因此TI 最近開發了一系列閘極驅動器技術,除了可降低. RQ FoM MOSFET 外也可實現高切換速度,進而改善電荷. 與轉換損耗,但仍可讓MOSFET ...

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氮化鎵功率電晶體的基礎
氮化鎵功率電晶體的基礎

https://epc-co.com

常用的. 指標FOM是RDS(on)乘以QG,顯示了元件在開啓. 狀態及切換時的表現。圖7展示了氮化鎵電. 晶體與最優異矽MOSFET 100V器件之FOM比. 較。當電壓增加,其RxQFOM更具優勢 ...

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針對同步整流最佳化中壓功率MOSFET成效卓著
針對同步整流最佳化中壓功率MOSFET成效卓著

https://www.2cm.com.tw

... FOM(品質因數)一般被視為衡量MOSFET性能的唯一最重要的指標。因此,已經開發出數項提高RDS(on)×QG FOM的新技術。雖然這些年來MOSFET技術和單元結構 ...