Contact end resistance measurement：Uncovering the Different Components of Contact Resistance ...
Uncovering the Different Components of Contact Resistance ...
由EBer著作·2023·被引用12次—Themeasuredcontact-endresistanceisthenRce=V23/I12.Fordevicefabricationwegrewmonolayer(1L)MoS2bychemicalvapordeposition[33](CVD)onSiO2( ...。其他文章還包含有：「Contactendresistanceteststructureappliedfor...」、「Determiningspecificcontactresistivityfromcontactend...」、「ContactresistanceandTLMmeasurements」、「UncoveringtheDifferentComponentsofContact...」、「Contac...
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Contact end resistance test structure applied for ...
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For a nanocontact the contact resistance is given by:(2) R c = r NO r c coth r NO r c L where rNO is the resistance per unit length of the nanoobject (in Ω/m) ...
Determining specific contact resistivity from contact end ...
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Abstract: A method is described to determine specific contact resistivity from contact end resistance measurements using a transmission line model.
Contact resistance and TLM measurements
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In measuring resistance with the four-point-probe or van der Pauw methods, we used 4 contacts (2 for current, 2 for voltage) to determine the sheet resistance ...
Uncovering the Different Components of Contact ...
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2.1 TLM and Contact-End Resistance Measurements. An important parameter of contacts with “lateral” current flow is the average length which ...
Contact resistance
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Contact resistance values are typically small (in the microohm to milliohm range). Contact resistance can cause significant voltage drops and heating in ...
Analytical measurements of contact resistivity in two
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The transfer length method (TLM) is introduced by Shockley [3] to measure the contact resistance in semiconductor devices, and it is very ...
Validation of methodology to determine the contact ...
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In contrast to the front side, the contact resistance at the end side can be directly measured. Hence, it can never be a negative value.