BGBM Process Flow：功率MOSFET的FSM與BGBM製程改善
功率MOSFET的FSM與BGBM製程改善
MOSFET 晶圓後段製程(BGBM)
https://www.istgroup.com
服務項目 · 金屬蒸鍍沈積(Metal Evaporation for Backside Metallization) · 厚銀製程(Thick Ag Process) · 背面金屬濺鍍沈積(Backside Metal Sputtering Deposition) · 電鍍( ...
先進封裝製程WLCSP
https://www.wpgdadatong.com
BGBM製程的簡介BGBM為Backside Grinding (晶背研磨) & Backside Metallization (晶背金屬化)兩種連續性的製程縮寫，稱為晶圓背面研磨和晶背金屬化， ...
MOSFET Wafer Thinning-FSM
https://www.istgroup.com
After passing the WAT (Wafer Acceptance Test) in the front-end wafer foundry FAB. How to handle the wafer thinning and backside metallization (BGBM) before ...
FSM & BGBM
https://www.rayteksemi.com
BGBM Process Flow. 瑞峰半導體股份有限公司. Raytek Semiconductor,Inc. TEL：886-3-5971111 / FAX：886-3-5971135. Add：5F., No.12, Guangfu N. Rd., Hukou Township ...
晶圓後段製程(BGBM)
https://www.propowertek.com
ProPowertek 宜錦導入專業人才與先進製程， 協助您最短時間內完成晶圓薄化與背金增長(BGBM) · 多種研磨製程解決方案 · 多種背金解決方案 · 背銀厚度達15um甚至可客製化到40um及 ...
正面金屬& 背面研磨和金屬鍍膜(FSM & BGBM)
http://www.rayteksemi.com
特色. 晶圓尺寸: 8吋(200mm); 晶背金屬層: Ti/ NiV/ Ag, Ti/Cu, 可依客戶需求進行厚度調整。 背面研磨薄化能力: 12吋產品: Min. 175μm, 8吋產品Min.150 μm。
BGBM
https://www.lblusem.com
LB Lusem's BGBM (Back Grinding Back Metal) technology is applied to power devices in all electronic circuits where batteries are used.
BGBM and CP technology
http://en.hymexa.com
BM: Backside Metallization, which uses the electron beam to generate high temperature (up to 1000 ℃) to evaporate the metal, make the metal atoms move in a ...