SRAM bit cell：Statistical Design of the 6T SRAM Bit

Memory Basics

https://www.egr.msu.edu

Lecture Notes 13.4. SRAM Bit Cell Circuit. • Two SRAM cells dominate CMOS industry. – 6T Cell. • all CMOS transistors. • better noise immunity. – 4T Cell.

Performance comparison of 6T SRAM bit

https://www.sciencedirect.com

An innovative static random-access memory (SRAM) bit-cell is designed based on six side-contacted field-effect diodes (S-FEDs).

SRAM

https://engineering.purdue.edu

(M bits). Storage cell. Array-Structured Memory Architecture. Problem: ASPECT RATIO or HEIGHT >> WIDTH. Amplify swing to rail-to-rail amplitude.

SRAM cell 详解原创

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连接到M5、M6的gate信号是word line(缩写成WL)，是用来控制SRAM bit-cell的开关信号，M5、M6一起打开或关闭。M5、M6的Drain端是读出或写入的bit ...

VLSI - Lecture 8b

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转帖：6T SRAM的運作原理

https://zhuanlan.zhihu.com

當WL 為1 時，SRAM bit-cell 則可以讀或寫。 M5 及M6 的drain 端是資料讀出貨寫入的埠，一般稱之為bit line (縮寫成BL)。如下 ...

靜態隨機存取記憶體

https://zh.wikipedia.org

靜態隨機存取記憶體（英語：Static random-access memory，縮寫：SRAM）是隨機存取 ... SRAM中的每一bit儲存在由4個場效電晶體（M1, M2, M3, M4）構成兩個交叉耦合的反 ...