SONOS Vs floating gate：Flash技術的現在與未來

Flash技術的現在與未來

2010年9月23日—FloatingGate之間太窄的問題可能可以3D(CT)陣列來解決，以堆疊的方式增加密度。MLC電荷數太少可能可藉由3D(CT)陣列來解決或使用新的記憶裝置。Charge ...。其他文章還包含有：「2.1.2ComparisonBetweenFloatingGateandSONOS」、「CypressSONOSTechnology」、「NovelSONOSandFloating」、「SONOS」、「綜觀非揮發性記憶體技術－SONOS與奈米晶體元件」、「臨場沉積法成長矽奈米晶體在SONOS記憶體元件之...」、「高...

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2.1.2 Comparison Between Floating Gate and SONOS

https://www.iue.tuwien.ac.at

SONOS gate stacks offer a higher quality charge storage due to the smooth homogeneity of the nitride film compared to the polycrystalline film of floating ...

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Cypress SONOS Technology

https://www.infineon.com

With simple integration compared to floating-gate flash, Cypress' SONOS technology enables a faster manufacturing ramp to high product yield.

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Novel SONOS and Floating

https://iopscience.iop.org

This paper focuses on two kinds of new flash cells for high density, low power and high reliability memory applications. One is the newly-proposed dual doping ...

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SONOS

https://en.wikipedia.org

Generally SONOS is very similar to traditional FG (floating gate) type memory cell, : 117 but hypothetically offers higher quality storage. This is due to the ...

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綜觀非揮發性記憶體技術－SONOS 與奈米晶體元件

https://www.tiri.narl.org.tw

(SONOS) and the nanocrystal nonvolatile memory devices, have investigated to overcome this oxide quality limit of the conventional floating gate NVSM.

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