SRAM Vcc min：CN102024819B
CN102024819B
一种sram关键电压参数的测试分析方法及系统
https://patents.google.com
现有技术中针对SRAM的Vccmin等关键电压参数的测量，每一颗芯片仅得到一个相应电压值，该电压值来自测试时某个存储单元(bit)出现数据读写功能失效时的相应电压值。例如 ...
Reducing VCC
https://www.magwel.com
The main technique consists of visual examination using the Field View in RNi™ to locate endpoints on the first metal layer that are over 10 ohms. This can be ...
集成电路模拟方法与系统、静态随机存取存储器设计方法
https://patents.google.com
最小供应电压(Vccmin)的电压为从SRAM存储器单元读取数据的最小电压与向SRAM存储器单元写入数据所需的最小电压中的较高值。由于最小供应电压(Vccmin)会影响SRAM的功效与可靠 ...
Sram位元線及寫入輔助設備與用於降低動態功率和峰值電流 ...
https://patents.google.com
如上所述，隨著程序技術縮小(或縮減)，SRAM胞元陣列在操作電壓之典型電源(Vcc)處不再具有足夠讀取和寫入邊界，除非使用特殊電路(例如，第2圖之寫入輔助電路200)來輔助讀取 ...
SRAM HTOL Vccmin shift analysis for process control
https://ieeexplore.ieee.org
Our work provides a correlation study between package level SRAM HTOL Vccmin shift and process controlling & process reliability evaluation. Based on the ...
Time dependent Vccmin degradation of SRAM fabricated ...
https://ieeexplore.ieee.org
Abstract. We present the results of simulations of voltage-induced Vccmin drift of SRAMs fabricated with high-k gate dielectrics. We show that high-k based ...
CY7C1041GN
https://www.infineon.com
为了确保器件正常工作，线性VCC 必须在> 100 μs 的时间内从VDR 上升到VCC(min) 或者在> 100 μs 的时间内保持VCC(min) 的稳定状态。 10. 这些参数由设计 ...