InP MBE

「InP MBE」熱門搜尋資訊

「InP MBE」文章包含有：「InPsubstrateevaluationforepi」、「MBEgrowthofInPusingpolycrystallineInPasphosphorus...」、「MBEgrowthofInP-HBTstructuresonGe」、「MisfitdislocationsinInGaAsInPmbesingleheterostructures」、「以MBE成長與InP晶格匹配之三元及四元化合物半導體」、「公司簡介」、「待機耗電流較低、體積小等特色，故在符合行動電話產品發展...」、「研究成員」、「英特磊IET」、「關於英特磊科技股份有限公司IntelliEPIInc.」

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InP substrate evaluation for epi

https://ieeexplore.ieee.org

This paper compares 3 and 4 SI InP substrates from multiple vendors in terms of their epi-ready quality for MBE growth, with a focus on surface morphology ...

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MBE growth of InP using polycrystalline InP as phosphorus ...

https://ieeexplore.ieee.org

The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated ...

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MBE growth of InP-HBT structures on Ge

https://ieeexplore.ieee.org

MBE growth of InP-based HBTs on GeOI/Si substrates is described. A GaAs buffer is nucleated on the GeOI; then a graded InAlAs metamorphic buffer transitions ...

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Misfit dislocations in InGaAsInP mbe single heterostructures

https://www.sciencedirect.com

Misfit dislocations in In1−xGaxAs/InP single heterostructures grown by molecular beam epitaxy were studied by X-ray topography, cathodoluminescence and ...

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