Infineon SiC MOSFET：Silicon Carbide MOSFET Discretes

Silicon Carbide MOSFET Discretes

FindoutmoreaboutourSiliconCarbide(SiC)CoolSiC™MOSFETSolutionsinDiscreteHousings–Offering650V,1200V,1700Vand2000VSolutions.。其他文章還包含有：「CoolSiC1200VSiCTrenchMOSFETs」、「CoolSiC™MOSFETG2助力英飛凌革新碳化矽市場」、「IMBG120R181M2HXTMA1INFINEON」、「IMBG120R350M1HXTMA1INFINEON」、「SiliconCarbideCoolSiCMOSFETs&Diodes」、「SiliconCarbideCoolSiC™MOSFETs」、「WhatdifferentiatestheSiCMOSFET...

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CoolSiC 1200V SiC Trench MOSFETs

https://www.mouser.com

The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application ...

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CoolSiC™ MOSFET G2助力英飛凌革新碳化矽市場

https://www.zenitron.com.tw

A：英飛凌：憑藉CoolSiC™ MOSFET G2技術，我們再次在降低功耗方面取得了巨大突破。例如，更加高效的G2晶片與更先進的封裝技術相結合，可以將電動車快速充電站的功率損耗比上一代 ...

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IMBG120R181M2HXTMA1 INFINEON

https://tw.element14.com

IMBG120R181M2HXTMA1. Silicon Carbide MOSFET, Single, N Channel, 14.9 A, 1.2 kV, 0.1814 ohm, TO-263HV. INFINEON IMBG120R181M2HXTMA1. 圖片僅供舉例說明。

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IMBG120R350M1HXTMA1 INFINEON

https://tw.element14.com

Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) ; 1+, NT$187.890 ; 10+, NT$148.730 ; 100+, NT$120.500 ; 500+, NT$113.520.

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Silicon Carbide CoolSiC MOSFETs & Diodes

https://www.mouser.com

Infineon CoolSiC Trench Power MOSFETs Modules are 1200V Silicon Carbide MOSFET power modules in Easy and 62mm housing, opening up new ...

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Silicon Carbide CoolSiC™ MOSFETs

https://www.infineon.com

CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery ...

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