Infineon SiC MOSFET：CoolSiC 1200V SiC Trench MOSFETs
CoolSiC 1200V SiC Trench MOSFETs
2020年3月13日—TheCoolSiC1200VSiCTrenchMOSFETsarebuiltonastate-of-the-arttrenchsemiconductorprocessoptimizedtodeliverthelowestapplication ...。其他文章還包含有：「CoolSiC™MOSFETG2助力英飛凌革新碳化矽市場」、「IMBG120R181M2HXTMA1INFINEON」、「IMBG120R350M1HXTMA1INFINEON」、「SiliconCarbideCoolSiCMOSFETs&Diodes」、「SiliconCarbideCoolSiC™MOSFETs」、「SiliconCarbideMOSFETDiscretes」、「Whatdiffere...
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CoolSiC™ MOSFET G2助力英飛凌革新碳化矽市場
https://www.zenitron.com.tw
A：英飛凌：憑藉CoolSiC™ MOSFET G2技術，我們再次在降低功耗方面取得了巨大突破。例如，更加高效的G2晶片與更先進的封裝技術相結合，可以將電動車快速充電站的功率損耗比上一代 ...
IMBG120R181M2HXTMA1 INFINEON
https://tw.element14.com
IMBG120R181M2HXTMA1. Silicon Carbide MOSFET, Single, N Channel, 14.9 A, 1.2 kV, 0.1814 ohm, TO-263HV. INFINEON IMBG120R181M2HXTMA1. 圖片僅供舉例說明。
IMBG120R350M1HXTMA1 INFINEON
https://tw.element14.com
Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) ; 1+, NT$187.890 ; 10+, NT$148.730 ; 100+, NT$120.500 ; 500+, NT$113.520.
Silicon Carbide CoolSiC MOSFETs & Diodes
https://www.mouser.com
Infineon CoolSiC Trench Power MOSFETs Modules are 1200V Silicon Carbide MOSFET power modules in Easy and 62mm housing, opening up new ...
Silicon Carbide CoolSiC™ MOSFETs
https://www.infineon.com
CoolSiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery ...
Silicon Carbide MOSFET Discretes
https://www.infineon.com
Find out more about our Silicon Carbide (SiC) CoolSiC™ MOSFET Solutions in Discrete Housings – Offering 650 V, 1200 V, 1700 V and 2000 V Solutions.
What differentiates the SiC MOSFETs from Infineon ...
https://www.yolegroup.com
SiC MOSFETs offer impressive attributes, including high breakdown voltage, low on-state resistance, and excellent thermal conductivity, ...
英飛凌CoolSiC™：最完善的SiC MOSFET 技術
https://www.digitimes.com.tw
英飛凌CoolSiC™ MOSFET 能滿足廣泛應用對於能源效率、功率密度和耐用度不斷提升的需求，包括：伺服器、電信和工業電源、太陽能系統、能源儲存和化成電池、UPS、馬達驅動以及 ...