Cree SiC MOSFET：1700 V Discrete Silicon Carbide MOSFETs

Discrete Silicon Carbide (SiC) MOSFETs

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Power Products

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Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. View ...

650 V Silicon Carbide MOSFETs

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2021年3月3日

1200 V Discrete Silicon Carbide MOSFETs

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Industry's broadest portfolio of 1200 V Silicon Carbide (SiC) MOSFETs; designed for high-speed switching and improved system-level efficiency.

650 V Discrete Silicon Carbide MOSFETs

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Wolfspeed's 650 V Discrete Silicon Carbide (SiC) MOSFETs are ideal for applications including high performance industrial power supplies; server/telecom ...

Cree C3M0350120D SiC MOSFET

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1.8. 2.5. 3.6. V. VDS = VGS, ID = 1 mA. Fig. 11. 2.0. V. VDS = VGS, ID = 1 mA, TJ = 150ºC. IDSS. Zero Gate Voltage Drain Current.

Cree C3M0065090J SiC MOSFET

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• SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support. • Application Considerations for Silicon-Carbide MOSFETs: www.cree ...

900 V Discrete Silicon Carbide MOSFETs

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Wolfspeed's 900 V Silicon Carbide (SiC) MOSFETs offer a minimum of 900 V across the full operating temperature range for fast switching power devices; ...

Cree C3M0065100J SiC MOSFET

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C3MTM SiC MOSFET technology. • Low parasitic inductance with separate driver source pin. • 7mm of creepage distance between drain and source.