Cree SiC MOSFET：Cree C3M0065090J SiC MOSFET
Cree C3M0065090J SiC MOSFET
•SiCMOSFETIsolatedGateDriverreferencedesign:www.cree.com/power/Tools-and-Support.•ApplicationConsiderationsforSilicon-CarbideMOSFETs:www.cree ...。其他文章還包含有：「DiscreteSiliconCarbide(SiC)MOSFETs」、「PowerProducts」、「650VSiliconCarbideMOSFETs」、「1200VDiscreteSiliconCarbideMOSFETs」、「1700VDiscreteSiliconCarbideMOSFETs」、「650VDiscreteSiliconCarbideMOSFETs」、「CreeC3M0350120DSiCMO...
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Discrete Silicon Carbide (SiC) MOSFETs
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Power Products
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Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. View ...
650 V Silicon Carbide MOSFETs
https://www.digikey.com
2021年3月3日
1200 V Discrete Silicon Carbide MOSFETs
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Industry's broadest portfolio of 1200 V Silicon Carbide (SiC) MOSFETs; designed for high-speed switching and improved system-level efficiency.
1700 V Discrete Silicon Carbide MOSFETs
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Wolfspeed's 1700 V Silicon Carbide (SiC) MOSFETs enable enhanced system efficiency and reliability through high-speed switching and high blocking voltage.
650 V Discrete Silicon Carbide MOSFETs
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Wolfspeed's 650 V Discrete Silicon Carbide (SiC) MOSFETs are ideal for applications including high performance industrial power supplies; server/telecom ...
Cree C3M0350120D SiC MOSFET
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1.8. 2.5. 3.6. V. VDS = VGS, ID = 1 mA. Fig. 11. 2.0. V. VDS = VGS, ID = 1 mA, TJ = 150ºC. IDSS. Zero Gate Voltage Drain Current.
900 V Discrete Silicon Carbide MOSFETs
https://www.wolfspeed.com
Wolfspeed's 900 V Silicon Carbide (SiC) MOSFETs offer a minimum of 900 V across the full operating temperature range for fast switching power devices; ...
Cree C3M0065100J SiC MOSFET
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C3MTM SiC MOSFET technology. • Low parasitic inductance with separate driver source pin. • 7mm of creepage distance between drain and source.