Subthreshold swing：On Device Architectures
On Device Architectures
由RJEHUETING著作·被引用19次—InaclassicalFETthesubthresholdswingislimitedbydif-fusionofchargecarriersandis≥60mV/decatroomtemper-aturewhereasforfutureCMOSalower, ...。其他文章還包含有：「Animprovedsubthresholdswingexpressionaccountingfor...」、「Onthemodellingoftemperaturedependence...」、「Sub」、「Subthresholdslope」、「SubthresholdswingcharacteristicsofmultilayerMoS2...」、「亚阈值摆幅」、「...
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An improved subthreshold swing expression accounting for ...
https://www.sciencedirect.com
The subthreshold swing ( S S ) measures the switching efficiency of MOSFET transfer characteristics from weak to strong inversion. The corresponding slope ...
On the modelling of temperature dependence ...
https://hal.science
Abstract. A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed.
Sub
https://web.iitd.ac.in
Sub-Threshold Swing. • The measure of how sharply the transistor can be turned on/off. • ln 2 = . • We define the sub-threshold slope. = l 10. ...
Subthreshold slope
https://en.wikipedia.org
A device characterized by steep subthreshold slope exhibits a faster transition between off (low current) and on (high current) states.
Subthreshold swing characteristics of multilayer MoS2 ...
http://ieeexplore.ieee.org
Subthreshold swing (S) is the figure of merit that determines the behavior of a transistor in the subthreshold region.
亚阈值摆幅
https://baike.baidu.com
Subthreshold swing 别名 S因子 公式 S = dVg / d(logIds) 单位 mV/dec 性能指标 ... 简介 亚阈值摆幅（Subthreshold swing）， 又称为S因子。这是MOSFET在亚阈状态工作 ...
亞閾值擺幅
https://baike.baidu.hk
亞閾值擺幅（Subthreshold swing）， 又稱為S因子。這是MOSFET在亞閾狀態工作時、用作為邏輯開關時的一個重要參數，它定義為：.
第一章緒論
https://ir.nctu.edu.tw
從表. 3-1 也可看出當金奈米粒子作為浮動閘極後，其臨限電壓值與控制組並不相同，這是因. 為整個元件的工函數發生了變化。 3-2-2 次臨限擺幅(Subthreshold Swing). 次臨限 ...