Gate tunneling current：A review of gate tunneling current in MOS devices
A review of gate tunneling current in MOS devices
由JCRanuárez著作·2006·被引用233次—Gatecurrentinmetal–oxide–semiconductor(MOS)devices,causedbycarrierstunnelingthroughaclassicallyforbiddenenergybar-.。其他文章還包含有：「10.7.Gatetunnelingcurrent」、「AnAnalyticalGateTunnelingCurrentModelforMOSFETs...」、「Gatetunnelingcurrentasafunctionofoxidethicknessfor...」、「GatetunnelingcurrentinthinoxideMOSFET」、「ImpactofGateTunnelingCurrentinScaled...
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10.7. Gate tunneling current
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An Analytical Gate Tunneling Current Model for MOSFETs ...
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Abstract—In this paper, we present a completely analytical model for the gate tunneling current, which can be used to get.
Gate tunneling current as a function of oxide thickness for ...
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Gate tunneling current as a function of oxide thickness for various gate biases. In this example, the gate tunneling current is dominated by election tunneling ...
Gate tunneling current in thin oxide MOSFET
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A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a series ...
Impact of Gate Tunneling Current in Scaled MOS on Circuit ...
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Abstract—The influence of gate direct tunneling current on ultra-thin gate oxide MOS (1.1 nm ¢ ¡¤£¦¥§ 1.5 nm, © = 50 – 70 nm) circuits has.
Voltage and oxide thickness dependent tunneling current ...
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In this paper presents a straightforward efficient investigation of tunneling current density for ultra thin oxide layer based metal-oxide-semiconductor ...
What is the gate oxide tunneling MOSFET?
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Gate oxide tunneling - As the thickness between the oxide and gate is reduced, to such an extent, that some amount of current starts flowing through the gate ...