Gate tunneling current:Impact of Gate Tunneling Current in Scaled MOS on Circuit ...
Impact of Gate Tunneling Current in Scaled MOS on Circuit ...
由CHChoi著作·被引用183次—Abstract—Theinfluenceofgatedirecttunnelingcurrentonultra-thingateoxideMOS(1.1nm¢¡¤£¦¥§1.5nm,©=50–70nm)circuitshas.。其他文章還包含有:「10.7.Gatetunnelingcurrent」、「AreviewofgatetunnelingcurrentinMOSdevices」、「AnAnalyticalGateTunnelingCurrentModelforMOSFETs...」、「Gatetunnelingcurrentasafunctionofoxidethicknessfor...」、「GatetunnelingcurrentinthinoxideMOSFET」、...
查看更多 離開網站10.7. Gate tunneling current
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A review of gate tunneling current in MOS devices
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Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy bar-.
An Analytical Gate Tunneling Current Model for MOSFETs ...
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Abstract—In this paper, we present a completely analytical model for the gate tunneling current, which can be used to get.
Gate tunneling current as a function of oxide thickness for ...
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Gate tunneling current as a function of oxide thickness for various gate biases. In this example, the gate tunneling current is dominated by election tunneling ...
Gate tunneling current in thin oxide MOSFET
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A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a series ...
Voltage and oxide thickness dependent tunneling current ...
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In this paper presents a straightforward efficient investigation of tunneling current density for ultra thin oxide layer based metal-oxide-semiconductor ...
What is the gate oxide tunneling MOSFET?
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Gate oxide tunneling - As the thickness between the oxide and gate is reduced, to such an extent, that some amount of current starts flowing through the gate ...