Gate tunneling current:Gate tunneling current in thin oxide MOSFET
Gate tunneling current in thin oxide MOSFET
由MFKarim著作·1996·被引用11次—Asimplemethodofcalculatingthepenetrationprobabilityoftheenergeticelectrons,andthetunnelingcurrentisproposed.Theseelectronsarefromaseries ...。其他文章還包含有:「10.7.Gatetunnelingcurrent」、「AreviewofgatetunnelingcurrentinMOSdevices」、「AnAnalyticalGateTunnelingCurrentModelforMOSFETs...」、「Gatetunnelingcurrentasafunctionofoxidethicknessfor...」、「ImpactofGat...
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A review of gate tunneling current in MOS devices
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Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy bar-.
An Analytical Gate Tunneling Current Model for MOSFETs ...
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Abstract—In this paper, we present a completely analytical model for the gate tunneling current, which can be used to get.
Gate tunneling current as a function of oxide thickness for ...
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Gate tunneling current as a function of oxide thickness for various gate biases. In this example, the gate tunneling current is dominated by election tunneling ...
Impact of Gate Tunneling Current in Scaled MOS on Circuit ...
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Abstract—The influence of gate direct tunneling current on ultra-thin gate oxide MOS (1.1 nm ¢ ¡¤£¦¥§ 1.5 nm, © = 50 – 70 nm) circuits has.
Voltage and oxide thickness dependent tunneling current ...
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In this paper presents a straightforward efficient investigation of tunneling current density for ultra thin oxide layer based metal-oxide-semiconductor ...
What is the gate oxide tunneling MOSFET?
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Gate oxide tunneling - As the thickness between the oxide and gate is reduced, to such an extent, that some amount of current starts flowing through the gate ...