RDS(on MOSFET)：MOSFET ON resistance
MOSFET ON resistance
ONresistance(RDS(ON))referstotheresistancefromtheDterminaltotheSterminalwhichincludesthechannelresistanceaswellasotherNlayer ...。其他文章還包含有：「AutomotiveUltra」、「MetalOxideFieldEffectTransistor」、「MOSFETDrain-SourceOn」、「ONResistance」、「WhatisRDS(ON),MOSFETdrain」、「如何不變更設計，快速降低MOSFET的導通阻抗RDS(on)」、「如何不變更設計，快速降低MOSFET的導通阻抗RDS(on)」
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Automotive Ultra
https://www.infineon.com
IR's next-generation automotive-qualified MOSFETs offer improved performance for heavy load applications compared to our previous benchmark technologies. When ...
Metal Oxide Field Effect Transistor
https://www.microcontrollertip
RDS(on) stands for “drain-source on resistance,” or the total resistance between the drain and source in a Metal Oxide Field Effect ...
MOSFET Drain-Source On
https://www.tek.com
What is drain-source on-resistance? Drain-source on-resistance (RDS(on)) is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state. As the VGS increases, the o
ON Resistance
https://www.rohm.com
What is ON Resistance? The resistance value between the Drain and Source of a MOSFET during operation (ON) is called the ON Resistance (RDS(ON)).
What is R DS(ON) , MOSFET drain
https://toshiba.semicon-storag
This is the resistance between the drain-source when MOSFET is on at the specified gate-voltage. The on-resistor RDS(ON) is calculated by dividing the specified ...
如何不變更設計，快速降低MOSFET的導通阻抗RDS (on)
https://www.istgroup.com
此外，我們也發現，在相同測試條件，及相同元件設計下，僅僅只是將晶圓厚度從100微米(um)降低到50微米(um)，RDS(on)(導通阻抗)便可有效降低了19% (註二)。
如何不變更設計，快速降低MOSFET的導通阻抗RDS(on)
https://www.propowertek.com
圖說: ProPowertek宜錦藉由晶圓薄化技術，將晶圓厚度從100微米(um)降低到50微米(um)，立刻協助客戶降低Power MOSFET的導通阻抗RDS(on) 19%。