「RDS(on MOSFET)」熱門搜尋資訊

RDS(on MOSFET)

「RDS(on MOSFET)」文章包含有:「AutomotiveUltra」、「MetalOxideFieldEffectTransistor」、「MOSFETDrain-SourceOn」、「MOSFETONresistance」、「ONResistance」、「WhatisRDS(ON),MOSFETdrain」、「如何不變更設計,快速降低MOSFET的導通阻抗RDS(on)」、「如何不變更設計,快速降低MOSFET的導通阻抗RDS(on)」

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mosfet原理mosfet導通電阻mos ron公式rdson公式mos導通電阻公式
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Automotive Ultra
Automotive Ultra

https://www.infineon.com

IR's next-generation automotive-qualified MOSFETs offer improved performance for heavy load applications compared to our previous benchmark technologies. When ...

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Metal Oxide Field Effect Transistor
Metal Oxide Field Effect Transistor

https://www.microcontrollertip

RDS(on) stands for “drain-source on resistance,” or the total resistance between the drain and source in a Metal Oxide Field Effect ...

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MOSFET Drain-Source On
MOSFET Drain-Source On

https://www.tek.com

What is drain-source on-resistance? Drain-source on-resistance (RDS(on)) is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state. As the VGS increases, the o

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MOSFET ON resistance
MOSFET ON resistance

https://www.shindengen.com

ON resistance (RDS (ON)) refers to the resistance from the D terminal to the S terminal which includes the channel resistance as well as other N layer ...

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ON Resistance
ON Resistance

https://www.rohm.com

What is ON Resistance? The resistance value between the Drain and Source of a MOSFET during operation (ON) is called the ON Resistance (RDS(ON)).

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What is R DS(ON) , MOSFET drain
What is R DS(ON) , MOSFET drain

https://toshiba.semicon-storag

This is the resistance between the drain-source when MOSFET is on at the specified gate-voltage. The on-resistor RDS(ON) is calculated by dividing the specified ...

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如何不變更設計,快速降低MOSFET的導通阻抗RDS (on)
如何不變更設計,快速降低MOSFET的導通阻抗RDS (on)

https://www.istgroup.com

此外,我們也發現,在相同測試條件,及相同元件設計下,僅僅只是將晶圓厚度從100微米(um)降低到50微米(um),RDS(on)(導通阻抗)便可有效降低了19% (註二)。

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如何不變更設計,快速降低MOSFET的導通阻抗RDS(on)
如何不變更設計,快速降低MOSFET的導通阻抗RDS(on)

https://www.propowertek.com

圖說: ProPowertek宜錦藉由晶圓薄化技術,將晶圓厚度從100微米(um)降低到50微米(um),立刻協助客戶降低Power MOSFET的導通阻抗RDS(on) 19%。